Exciting advances within the semiconductor manufacturing space has enabled Moore’s law to continue past the 7nm node. The cutting-edge technology is called extreme ultraviolet (EUV) lithography and is used to pattern intricately designed microchips. These devices inherently use less energy and have higher performance
which can be utilized in AI, smart cars, 5G, phones, voice and augmented reality solutions. Many EUV technology challenges include high vacuum temperature controlled conditions, ultra-clean environments, ultra-pure gases, gas supply and changing abatement/exhaust management requirements.
EUV lithography is a soft X-ray technology which utilizes an extremely short wavelength of 13.5 nm where the source is key as generation is the biggest challenge. This vacuum driven technology places strict requirements on temperature control of optical assemblies while under high vacuum conditions as the EUV beam is taken out from high-temperature, high-density plasma. Exposure can only be performed in vacuum because all gases absorb 13.5 nm light therefore the entire light source, optical stem and wafer are housed in this ultra-clean vacuum environment.
EUV utilizes high flows of Hydrogen (H2) to keep the collectors clean from Tin (Sn) deposits. Using H2 reacts with Sn to yield stannane (SnH4) an instable (insoluble and combustible) byproduct. Fortunately, H2 and SnH4 can be pumped away. Ebara has developed customized vacuum pumps and abatement resulting in new vacuum pumps, abatement and exhaust management solution.
Visit us online at www.ebaratech.com to learn more about our complete portfolio of products supporting the semiconductor industry and how we can specifically minimize your costs (capital and operational) while improving process/production uptime.
